maximum ratings: (t a =25c) symbol units continuous reverse voltage v r 30 v average forward current i o 3.0 a peak forward surge current (8.3ms) i fsm 25 a power dissipation p d 4.5 w (note 1) power dissipation p d 4.0 w (note 2) power dissipation p d 2.5 w (note 3) operating and storage junction temperature t j , t stg -65 to +150 c thermal resistance ja 27.78 c/w (note 1) thermal resistance ja 31.25 c/w (note 2) thermal resistance ja 50.00 c/w (note 3) electrical characteristics per diode: (t a =25c unless otherwise noted) symbol test conditions min max units i r v r =30v 1.0 ma bv r i r =5.0ma 30 v v f i f =500ma 0.30 v v f i f =1.0a 0.35 v v f i f =2.0a 0.40 v v f i f =3.0a 0.45 v CTLSH3-30M833 surface mount low v f silicon schottky rectifier tiny leadless module tm tlm833 case central semiconductor corp. tm r4 (03-april 2006) description: the central semiconductor CTLSH3-30M833 is a high performance 3.0 amp schottky rectifier designed for applications where small size and operational efficiency are prime requirements. with a maximum power dissipation of 4.5w, this leadless package design has a watts per unit area at least twice that of equivalent packaged devices. features: ? high current (i f =3.0a) ? high thermal efficiency ? low leakage/low v f ? 3 x 3mm tlm? case notes: (1) ceramic or aluminum core pc board with copper mounting pad area of 75 mm 2 (2) fr-4 epoxy pc board with copper mounting pad area of 75 mm 2 (3) fr-4 epoxy pc board with copper mounting pad area of 25 mm 2 marking code: cha1 bottom view top view
central semiconductor corp. tm tlm833 case - mechanical outline CTLSH3-30M833 surface mount low v f silicon schottky rectifier tiny leadless module tm r4 (03-april 2006) lead code: 1) anode 2) anode 3) anode 4) anode 5) cathode 6) cathode 7) cathode 8) cathode marking code: cha1 suggested mounting pad layout for standard mounting see tlm833 package details
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